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| Final data SPD06N80C3 VDS RDS(on) ID 800 0.9 6 P-TO252 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO252 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated V A Type SPD06N80C3 Package P-TO252 Ordering Code Q67040-S4352 Marking 06N80C3 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Continuous drain current TC = 25 C TC = 100 C Symbol ID Value 6 3.8 Unit A Pulsed drain current, t p limited by Tjmax Avalanche energy, single pulse ID=1.2A, VDD=50V ID puls EAS EAR IAR VGS Ptot Tj , Tstg 18 230 0.2 6 20 83 -55... +150 A V W C mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID=6A, V DD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Power dissipation, TC = 25C Operating and storage temperature Page 1 2003-07-02 Final data Maximum Ratings Parameter Drain Source voltage slope VDS = 640 V, ID = 6 A, Tj = 125 C SPD06N80C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=250, VGS=V DS VDS=800V, V GS=0V, Tj=25C, Tj=150C Symbol min. RthJC RthJA RthJA Tsold - Values typ. max. 1.5 62 75 50 260 Unit K/W C Values typ. 870 3 0.5 0.78 2.1 0.7 max. 3.9 800 2.1 - Unit V V(BR)DS VGS=0V, ID=6A A 10 100 100 0.9 nA Gate-source leakage current I GSS VGS=20V, V DS=0V VGS=10V, ID =3.8A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Page 2 2003-07-02 Final data Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance,5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD=640V, ID=6A, VGS=0 to 10V VDD=640V, ID=6A SPD06N80C3 Symbol gfs Ciss Coss Crss Conditions min. VDS2*ID*R DS(on)max, ID=3.8A VGS=0V, VDS=25V, f=1MHz Values typ. 4 785 390 20 22 42 25 15 65 8 max. 75 11 - Unit S pF Effective output capacitance,4) Co(er) VGS=0V, VDS=0V to 480V pF td(on) tr td(off) tf VDD=400V, VGS=0/10V, ID=6A, RG=15, Tj=125C - ns - 3.3 14 27 6 35 - nC V(plateau) VDD=640V, ID=6A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220C, reflow 4C 5C o(er) o(tr) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-07-02 Final data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.024 0.024 0.086 0.309 0.317 0.112 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 Unit Symbol Value typ. VSD t rr Q rr I rrm dirr /dt VGS =0V, IF=IS VR =400V, IF =IS , diF/dt=100A/s SPD06N80C3 Symbol IS I SM Conditions min. TC=25C Values typ. 1 520 5 18 400 max. 6 18 1.2 - Unit A V ns C A A/s Unit 0.0001172 0.000447 0.0006303 0.001828 0.004786 0.046 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2003-07-02 Final data 1 Power dissipation Ptot = f (TC) 100 SPD06N80C3 SPD06N80C3 2 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25C 10 2 W 80 70 A 10 1 Ptot 60 50 40 30 20 10 0 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 20 40 60 80 100 120 C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T 10 1 4 Typ. output characteristic ID = f (VDS); Tj =25C parameter: tp = 10 s, VGS 20 K/W A 16 14 20V 10V 8V 10 0 ZthJC ID 12 10 8 7V 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6V 6 4 5V 2 10 -3 -7 10 -6 -5 -4 -3 -1 10 10 10 10 s tp 10 0 0 5 10 15 20 V 30 VDS Page 5 2003-07-02 Final data 5 Typ. output characteristic ID = f (VDS); Tj =150C parameter: tp = 10 s, VGS 11 SPD06N80C3 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS 5 A 9 8 20V 10V 8V 7V 4V 5V 6V ID 7 6 RDS(on) 4 6V 3.5 4.5V 5.5V 3 5 4 3 2 1 0 0 5 10 15 20 5V 5.5V 2.5 2 4.5V 4V 7V 8V 10V 20V 1.5 V 30 1 0 2 4 6 8 VDS 11 A ID 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 3.8 A, VGS = 10 V 5.5 SPD06N80C3 8 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 20 4.5 A 25C 16 14 R DS(on) 4 ID 3.5 3 12 10 2.5 8 2 1.5 98% 1 0.5 0 -60 -20 20 60 100 C 150C 6 4 2 0 0 typ 180 2 4 6 8 10 12 14 16 Tj Page 6 V 20 VGS 2003-07-02 Final data 9 Typ. gate charge VGS = f (Q Gate) parameter: ID = 6 A pulsed 16 V SPD06N80C3 SPD06N80C3 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPD06N80C3 A 12 0.2 VDS max VGS 10 1 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0.8 VDS max 4 2 10 -1 0 0 0 5 10 15 20 25 30 35 40 nC 50 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 6 12 Avalanche energy EAS = f (Tj) par.: ID = 1.2 A, VDD = 50 V 250 mJ A 200 175 150 125 100 2 TJ(Start) = 25C IAR 4 3 E AS TJ(Start) = 125C 75 50 25 1 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 s 10 tAR 4 0 25 50 75 100 C Tj 150 Page 7 2003-07-02 Final data 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 980 SPD06N80C3 SPD06N80C3 14 Avalanche power losses PAR = f (f ) parameter: EAR =0.2mJ 200 V 940 W 160 140 120 100 80 60 40 20 04 10 5 6 V(BR)DSS 920 880 860 840 820 800 780 760 740 720 -60 -20 20 60 100 C 180 PAR 900 10 Hz f 10 Tj 15 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 16 Typ. Coss stored energy Eoss=f(VDS) 7 pF Ciss J 10 3 C E oss 10 2 Coss 5 4 3 10 1 Crss 2 1 10 0 0 100 200 300 400 500 600 800 V VDS 0 0 100 200 300 400 500 600 800 V VDS Page 8 2003-07-02 Final data SPD06N80C3 Definition of diodes switching characteristics Page 9 2003-07-02 Final data P-TO-252-3-1 (D-PAK) SPD06N80C3 Page 10 2003-07-02 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPD06N80C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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